Project A6:

Resistive switching of amorphous, non-stoichiometric oxide films
(since 2015)

This project aims at the in-depth understanding of bulk resistive switching in amorphous, non-stoichiometric oxide films. For this purpose, a combination of experimental and theoretical investigations will be performed to elucidate the various aspects of the bulk switching mechanism and to compare the switching kinetics with filamentary switching. In addition, we want to generalize our proof of principle results that we obtained within the first period for amorphous gallium oxide to the broad class of amorphous oxides.

Insulator-metal transition and resistive switching in amorphous, non-stoichiometric oxides
(2011 - 2015)

This project aims at the detailed understanding of the correlation between the structure, the non-stoichiometry and the underlying defects, the electrical conductivity, and the band structure of highly non-stoichiometric, amorphous oxides and its application for resistive switching processes. We are investigating mainly two different binary oxides, gallium oxide GaOx and titanium oxide TiOx which can be regarded as model systems for main group oxides and transition metal oxides. Experimental studies on structural and electrical properties are complemented by investigations on mass transport, spectroscopic studies, density functional theory calculations and simulations.

Principal investigator:

Prof. Dr. rer. nat. M. Martin
Institut für physikalische Chemie
RWTH Aachen University
Phone: +49 (0)241 80 94712

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