Project B10 (N):

Resistive switching mechanism in Mott oxide insulators
(since 2015)

The aim of this project is to gain insight into the conductive filament formation and resistive switching processes and kinetics occurring in dedicated oxides such as Cr doped vanadium oxide, known to have a Mott transition. The influence the amount of defects in the oxide insulator on the prevalence of valance-change or a recently identified electronic avalanche induced Mott transition based switching mechanism will be investigated. Advanced transport and magneto-transport measurements at low temperatures will be used to determine the role of disorder and correlation effects in these devices.

Principal investigators:

Dr. ir. D. Wouters
Institute für Werkstoffe der Elektrotechnik 2
RWTH Aachen University
Phone: +49 (0)241 80 27820

Prof. Dr. rer. nat. M. Wuttig
I. Physikalisches Institut IA
RWTH Aachen University
Phone: +49 (0)241 80 27155

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