Project C3( E):
(2011 - 2015)

Self-assembled phase-change nanowires

The electrical drift of resistance in chalcogenide phase change materials (PCMs) needs to be overcome before memory devices can be realized using these materials. One possible origin for this observation could be stress-related. The growth of PCM chalcogenide nanowires by self-assembly could be the solution to alleviate the stress and is in the focus of this project. The influence of chalcogenide nanowire growth parameters on their morphology, composition and structure as well as on their electrical characteristics are being carried out. Additionally the effect of nanoscaling on structure is being systematically studied. The results will be compared to those of thin films obtained of the same materials studied in other projects.

Principal investigators:

Dr. rer. nat. H. Hardtdegen
Peter Grünberg Institute (PGI-9)
Forschungszentrum Jülich GmbH
Phone: +49 (0)2461 61 2360

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