Project C6 (N):

High textured phase change nanostructures for low power devices
(since 2015)

This project aims at reproducing and elucidating the favorable switching properties (including improved power consumption) reported in so-called "interfacial phase change memories" (iPCMs). Beside preparing and characterizing epitaxial Sb2Te3/GeTe superlattices forming the basis of iPCMs, simpler model systems highlighting individual aspects of the iPCM structures will be studied. To this end, highly textured or epitaxial GeTe and Sb2Te3 thin films, crystalline epitaxial ternary Ge-Sb-Te alloys and nanostructures will be investigated. By isolating and disentangling the impacts of texture, superstructure and dimensionality, we aspire a deeper understanding of the iPCM effect, which will permit the systematic improvement of iPCM devices.




Principal investigator:

Prof. Dr. rer. nat. D. Grützmacher
Peter Grünberg Institute (PGI-9)
Forschungszentrum Jülich GmbH
Phone: +49 (0)2461 61 2340
E-mail: d.gruetzmacher@fz-juelich.de

Dr. rer. nat. H. Hardtdegen
Peter Grünberg Institute (PGI-9)
Forschungszentrum Jülich GmbH
Phone: +49 (0)2461 61 2360
E-mail: h.hardtdegen@fz-juelich.de

Dr. rer. nat. P. Jost
I. Physikalisches Institut IA
RWTH Aachen University
Phone: +49 (0)2461 61 9822
E-mail: jost@physik.rwth-aachen.de

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