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Nanoswitches

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  • A
    • A1 From structure – property correlations to tailor-made chalcogenide materials
    • A2 Correlation between the atomic structure and electronic states in resistively switching oxides
    • A5 High-temperature, high-pressure properties of chalcogenides and low-valent transition-metal oxides
  • B
    • B1 Fast transient electrical analysis of resistive switching phenomena
    • B3 Fundamentals of ion transport processes in resistive switching oxides
    • B4 Exploring the impact of bonding on switching kinetics
    • B5 Investigating the influence of defects on charge carrier properties in resistive switching with near-field optical microscopy and spectroscopy
    • B6 Electronic structure and phase formation in resistive memory materials
    • B8 Theory and modelling of valence-change based resistive switching
    • B9 In situ transmission electron microscopy of resistive switching devices
    • B10 Resistive switching mechanism in Mott oxide insulators
  • C
    • C1 Size effects on the phase stability and switching properties of chemically synthesized HfO2 and Sb-based chalcogenide nanoparticles
    • C2 Defect engineering and scaling of resistively switching oxide thin films
    • C4 Effects of nanoscale confinement on the properties of phase change materials
    • C6 Growth, structure and switching of phase change materials in reduced dimensions
    • C7 Atomic scale imaging and manipulation of transition metal oxides
    • C8 Study of localized defects in phase change materials and oxides with atom probe tomography and correlative microscopy
  • Z
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  • Home
  • People
  • Publications
  • Job Vacancies
  • Contact
  • Imprint
  • Projects
  • A
    • A1 From structure – property correlations to tailor-made chalcogenide materials
    • A2 Correlation between the atomic structure and electronic states in resistively switching oxides
    • A5 High-temperature, high-pressure properties of chalcogenides and low-valent transition-metal oxides
  • B
    • B1 Fast transient electrical analysis of resistive switching phenomena
    • B3 Fundamentals of ion transport processes in resistive switching oxides
    • B4 Exploring the impact of bonding on switching kinetics
    • B5 Investigating the influence of defects on charge carrier properties in resistive switching with near-field optical microscopy and spectroscopy
    • B6 Electronic structure and phase formation in resistive memory materials
    • B8 Theory and modelling of valence-change based resistive switching
    • B9 In situ transmission electron microscopy of resistive switching devices
    • B10 Resistive switching mechanism in Mott oxide insulators
  • C
    • C1 Size effects on the phase stability and switching properties of chemically synthesized HfO2 and Sb-based chalcogenide nanoparticles
    • C2 Defect engineering and scaling of resistively switching oxide thin films
    • C4 Effects of nanoscale confinement on the properties of phase change materials
    • C6 Growth, structure and switching of phase change materials in reduced dimensions
    • C7 Atomic scale imaging and manipulation of transition metal oxides
    • C8 Study of localized defects in phase change materials and oxides with atom probe tomography and correlative microscopy
  • Z
  • Ö