B9 In situ transmission electron microscopy of resistive switching devices

In Project B9 (2019-2023), the focus will be on in situ TEM characterization of novel PCM and VCM materials during switching processes. Changes in atomic structure and local electric field distributions will be tracked with sub-nm spatial resolution using both pixelated STEM techniques and off-axis electron holography. For PCMs, the primary focus will be on studies of spatially confined devices, for which the small device sizes and short retention times complicate imaging. For VCMs, the primary focus will be on studies of defects, which require sub-atomic-resolution structural and chemical analysis.

In situ electrical biasing and temperature dependence of phase switching phenomena studied by transmission electron microscopy

The aim of this project is to perform time-resolved measurements of local changes in electric field, micro-structure and composition in phase change materials (PCMs) during switching processes in situ in the transmission electron microscope (TEM). We will make use of recent developments in TEM specimen holder and specimen preparation technology to apply precise temperature control and multiple electrical contacts to specimens studied on chips fabricated using micro-electromechanical systems (MEMS) technologies. In combination with project C4, in which TEM-compatible MEMS-based devices will be fabricated, we will provide a sub-nm-resolution understanding of switching phenomena using complementary TEM techniques.

Principal investigator:

Prof. Dr. R.E. Dunin-Borkowski
Ernst Ruska-Centrum (ER-C) und
Peter Grünberg Institut (PGI-5)
Forschungszentrum Jülich GmbH
Phone: +49 (0)2461 61 9297
E-mail: r.dunin-borkowski@fz-juelich.de