B10 Resistive switching mechanism in Mott oxide insulators

Project B10 (2019-2023) explores the different resistive switching mechanisms that occur in devices using Cr-doped V2O3 Mott material, as function of material structure, oxygen stoichiometry and Cr-doping level, and electrodes used. In particular, it aims to investigate if electron correlation effects (i.e. a true “Mott” transition) could be the mechanism involved in the volatile and/or non-volatile resistive switching observed in devices with symmetric electrodes. Thus, temperature and possibly pressure-dependent switching experiments are planned as well as detailed characterization by TEM and ATP.


The aim of this project is to gain insight into the conductive filament formation and resistive switching processes and kinetics occurring in dedicated oxides such as Cr doped vanadium oxide, known to have a Mott transition. The influence the amount of defects in the oxide insulator on the prevalence of valance-change or a recently identified electronic avalanche induced Mott transition based switching mechanism will be investigated. Advanced transport and magneto-transport measurements at low temperatures will be used to determine the role of disorder and correlation effects in these devices.

Principal investigators:

Dr. ir. D. Wouters
Institute für Werkstoffe der Elektrotechnik 2
RWTH Aachen University
Phone: +49 (0)241 80 27820
E-mail: wouters@iwe.rwth-aachen.de

Prof. Dr. rer. nat. M. Wuttig
I. Physikalisches Institut IA
RWTH Aachen University
Phone: +49 (0)241 80 27155
E-mail: wuttig@physik.rwth-aachen.de